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2019
30
Y. J. Yoo, S. Ju*, and S. Y. Park, “RGB bandpass filter based on optical materials,” IVC 2019 
29
Y. J. Yoo, S. Y. Park, and S. Ju*, “Highly selective UV bandpass filter by double-plate metamaterials,” IVC 2019 
2016
28

T. Lim, J. Lee, and S. J*, “Detection of chemical substances in water by using oxide nanowire transistors covered by a three dimensional graphene,” KPS 2016.

27

J. Lee, J. Han, C. S. Yeo, T. Lim, S. Park, and S. J*, “Observation of a water droplet motion by using oxide nanowire transistor covered by a nanofiber mesh,” KPS 2016.

2015
26

J.-T. Seo, J. Han, T. Lim, K.-H. Lee, J. Hwang, H. Yang, S. Ju, “Fully transparent quantum dot light-emitting diode integrated with graphene anode and cathode,” MRS 2015.

2014
25

J.-T. Seo, J. Han, T. Lim, K.-H. Lee, J. Hwang, H. Yang, S. Ju, “Fully transparent quantum dot light-emitting diode integrated with graphene anode and cathode,” Nanopia 2014.

24

J. Hwang, J.-T. Seo, J. Bong, T. Lim, J. Cha, S. Hong, S. Ju, Manipulation of graphene work function using a self-assembled monolayer,” KPS 2014.

23

B. Jin, T. Lim, S. Ju, M. Meyyappan, J.-S. Lee, “Improved phase transition performance of Ga-doped indium oxide nanowire phase change random access memory with encapsulating layer,” Nano Korea symposium 2014.

2012
22

S. Ju, “Nanowire-graphene hybrid nanostructures for transistor and display applications,” IEEE NMDC 2012.

2009
21

S. Kim, S. Kim, C. Lee, P. Srisung, P. Chen, C. Zhou, X. Xu, M. Qi, S. Mohammadi, S. Ju, D. Janes, “Femtosecond laser annealing effects on indium oxide nanowire transistors,” ISDRS 2009.

20

S.K. Kim, S. Ju, J. H. Back, Y. Xuan, P. D. Ye, M. Shim,S. Mohammadi, “Transparent driving thin-film transistor circuits based on uniformly grown singlewalled carbon nanotubes network,” DRC 2009.

19

S. Kim, C. Delker, P. Chen, C. Zhou, S. Ju, D. Janes, “Oxygen plasma exposure effects on In2O3 nanowire transistors,” EMC 2009.

18

S. Kim, C. Delker, P. Chen, C. Zhou, S. Ju, D. B. Janes, “Plasma exposure effects on indium oxide nanowire transistors,” EMC 2009.

17

S., C. H. Lee, P. Chen, C. Zhou, M. Qi, S. Ju, D. B. Janes, “Femtosecond laser annealing effects on indium oxide nanowire transistors” DRC 2009.

16

S. Kim, S. Kim, M. Xu, L. Yu, P. D. Ye, S. Ju, D. B. Janes, S. Mohammadi, “Transparent driving TFT circuits based on uniformly grown single-walled carbon nanotubes,” DRC 2009.

15

S. Ju, C. Zhou, C. Yang, S. Kim, D. B. Janes, “Fully transparent nano-display array driven by nanowire and carbon nanotube transistor circuitry,” Semicon Korea 2009.

2008
14

X. Sun, S. Ju, D. B. Janes, B. Yu, “Self-assembly of low-dimensional phase-change nanomaterials for information storage,” 7th IEEE International Conference on Nanotechnology, p. 1067-71, 2008.

13

A. Facchetti, S. Ju, D. B. Janes, B. Jones, M. Wasielewski, T. J. Marks, “Organic-inorganic flexible and transparent electronics,” Flexible Electronics and Displays Conference and Exhibition, p 27-34, 2008.

12

S. Kim, S. Ju, J. H. Back, Y. Xuan, P. D. Ye, M. Shim, D. B. Janes, S. Mohammadi, “Aligned single-walled carbon nanotube thin-film transistor arrays for transparent electronics,” DRC 2008.

2007
11

S. Ju, G. Lu, P.-C. Chen, A. Facchetti, C. Zhou, T. J. Marks, D. B. Janes, “High performance In2O3 nanowire transistors using organic gate nanodielectrics,” DRC 2007.

10

S. Ju, S. Kim, G. Lu, A. Facchetti, S. Mohammadi, T. J. Marks, D. B. Janes, “Interface study of ZnO nanowire transistors using low-frequency noise and temperature-dependent I-V measurements,” EMC 2007.

2006
9

S. Ju, K. Lee, J. Li, R. P. H. Chang, M. -H. Yoon, A. Facchetti, T. J. Marks, D. B. Janes, “ZnO Nanowire FETs: Ozone-induced threshold voltage shift and multiple nanowire effect,” IEEE Nano 2006.

8

S. Ju, K. Lee, M.-H. Yoon, A. Facchetti, T. J. Marks, D. B. Janes, “High-Performance enhancement-mode ZnO nanowire FETs with organic nanodielectrics: Effects of ozone treatments,DRC 2006.

7

S. Ju, K. Lee, D. B. Janes, M. -H. Yoon, A. Facchetti, T. J. Marks, J. Li, R. P. H. Chang, “High-Performance ZnO nanowire field-effect transistors with self-assembled organic gate nanodielectrics,MRS 2006.

2005
6

S. Ju, K. Lee, D. B. Janes, M. -H. Yoon, A. Facchetti, T. J. Marks, “Performance enhancement of ZnO nanowire field-effect transistors with self-assembled organic nanodielectrics,” ISDRS 2005.

2002
5

S. Ju, S. Yu, J. Kwon, H. Kim, B. Kim, S. Kim, H. Chung, M. S. Weaver, M. H. Lu, R. C. Kwong, M. Hack, J. J. Brown, “High performance 2.2 inch QCIF full color AMOLED displays based on electrophosphorescence,” SID 2002.

4

J. Oh, H. Lee, H. Lee, D. Kim, C. Ko, H. Jeong, J. Lee, G. Kim, S. Ju, “Optical analysis for organic light emitting devices by using computer simulation,” SID 2002.

2001
3

J. Oh, H. Lee, H. Lee, S. Ju, H. Chung, J. Kwon, K. Lee, “New optical analysis for organic light emitting devices,” IMID 2001.

2

S. Ju et al, “Full color active matrix organic light emitting diode display with low temperature poly-Si TFT technology”, Samsung SDI, 2001.

1

W. Kwak, J. Park, S. Ju, S. Lee, S. Seo, S. Jeong, J. Song, T. Kang, “Design and fabrication of 15.1-inch XGA AMOLED display,” Samsung SDI, 2001.

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