나노스케일 표면제어 연구실 Nanoscale Surface Engineering Group
Size : 4inch Mask patterning (1 μm resolution)
Size: 4inch Pattern etching(Ar, O2, N2, CF4, SF6)
Work area (300x300 mm) Marking resolution(~13 μm)
Size: 4inch Auto PR coating
Size : 4inch Auto PR developing
Size : 4inch Nanowires Graphene Thin film
Size: 4inch Dielectric thin films Semiconducting thin films
Work area (300x300 mm) Metals (ITO, Al, Ti, Ni) Insulators (SiO2, CeO2) Semiconductor (ZnO, WOx, In2O3)
Fiber synthesis Materials (GO, RGO,PVA, Polyurethane 등)
Size : 4inch High-k dielectrics(Al2O3, HfO2)
Size: 1inch Spray coating
Size : 4inch Pattern anneal Micro anneal (2 μm resolution)
Size: 4inch Device anneal
Size: 4inch Pattern ashing
Size: 2.8 L Substrate cleaning
Size : 4inch Substrates Cleaning Remove organics
Size: 60 L PR baking (< 300 ℃)
Mentor graphics Transistor design Display design
Minolta CS-2000 Spectroradiometer Keithley 2400 source Pixel type Jig
Size: 2inch Static contact angle Dynamic contact angle
Size: 4inch Thickness measure Roughness measure
Size : 2inch 532 & 633 nm laser XY mapping available
Agilent 7890 Gas detection: H2, O2
Size : 2inch 266 & 325 nm laser XY mapping available
B1500 Size: 4inch IV & CV & Transistor measurement
Size: 4inch X 5, x 20, x 50, x 100 Bright/Dark field CCD detector
Size: 4inch 1mOhm~1MOhm 0.5% accuracy
Range: -20~650 ℃ Resolution: ±2 ℃
JCM-5000 Size: 1inch Magnification: x10~60,000
Size: 2inch Range: 200~2,000 nm
Size: 4inch Fine dust filtering measurement
Karl Fischer Range: ppm <